| PART |
Description |
Maker |
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32）的CMOS掩膜ROM
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM
CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components
Sharp Corporation
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX26L3220 MX26L3220XBI-12 MX26L3220XBI-90 MX26L322 |
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX25L3239E MX25L3239EM2I10G MX25L3239EMBI10G |
32M-BIT [x 1 / x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N6VU4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MX25U3235E MX25U3235EZNI10G MX25U3235EM2I10G |
32M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3275EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
